2SD313 npn epitaxial silicon transistor low frequency power amplifier ! complement to 2sb507 to-220 a b s o lute m a x i mum r a t i n g s (t a = 25 o c ) characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) c o l l e c t o r d issip a ti o n ( t c =25 o c ) junction temperature storage temperature v cbo v ceo v ebo i c p c t j tstg 60 60 7 3 30 150 -50~150 v v v a w o c o c e l e c tric a l ch a r a ct e r i s tics (t a = 2 5 o c ) characteristic symbol test condition min typ max unit collector cutoff current emitter cutoff current dc current gain collector- emitter saturation voltage current gain bandwidth product i c b o i ebo h fe1 v ce(sat) f t v cb = 60v , i e =0 v eb = 7v , i c = 0 v ce = 2v , i c =1a i c =2a , i b =0.2a v c e = 5v , i c =0.5a 40 8 100 100 320 1.0 a a w ing s h i n g c o m p u t e r c o m p o n e n ts c o ., ( h. k ) l td . te l ( 85 2 ) 234 1 92 76 f a x : ( 852 ) 27 97 8 15 3 . home p a g e : h t tp: / / ww w .w i ng sh in g . co m e _ mail: wsccltd@hkstar.com
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